AOD538 Datasheet and Specifications PDF

• Trench Power AlphaMOS (αMOS™ LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(.

pike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 54 280 34 27 36 65 36 93 46 6.2 4 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Max.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source .

*Drain Current
*ID= 70A@ TC=25℃
*Drain Source Voltage- : VDSS=30V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and.