AOI11S60 Datasheet and Specifications PDF

Product Summary The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applica.

issipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.

*Drain Current
*ID= 11A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies .