AOI1N60 Datasheet and Specifications PDF

Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC.

recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL DS G AOU1N60 Maximum 600 ±30 1.3 0.8 4 1 15 30 5 45 0.36 -50 to 150 300 G S.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.

*Drain Current
*ID=1.3A@ TC=25℃
*Drain Source Voltage- : VDSS=600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 9.0Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and.