| Part Number | AOI2210 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V) 200V 18A . TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 41 Maximum Junction-to-Case Steady-State RqJC 1 G D S Form Tape & Reel Tube G S Minimum. |
AOI2210 Datasheet and Specifications PDF
The AOI2210 is a 200V N-Channel MOSFET.
| Part Number | AOI2210 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source.
*Drain Current *ID= 18A@ TC=25℃ *Drain Source Voltage- : VDSS=200V(Min) *Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies an. |