AOI4286 Datasheet
AOI4286 Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power .
IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 14 10 25 4 3 4 0.8 30 15 2.5 1.6 -55 to 175 G D S G Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junctio.
AOI4286 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*With To-251(IPAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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