AOI442 Datasheet
AOI442 Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS I.
ermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 17.4 51 1.8 Max 25 60 2.5 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0 : August 2023 Page 1 .
AOI442 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor AOI442 ·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche test.
*Drain Current
*ID= 37A@ TC=25℃
*Drain Source Voltage-
: VDSS= 60V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 20mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for serv.