| Part Number | AOI538 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | • Trench Power AlphaMOS (αMOS™ LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(. pike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 54 280 34 27 36 65 36 93 46 6.2 4 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Max. |
AOI538 Datasheet and Specifications PDF
The AOI538 is a 30V N-Channel MOSFET.
Key Specifications
| Max Operating Temp | 175 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | AOI538 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
30
V
VGS
Gate-Source .
*Drain Current *ID= 70A@ TC=25℃ *Drain Source Voltage- : VDSS=30V(Min) *Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and. |