| Part Number | AOK9N90 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ci. purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC AOK9N90 900 ±30 9 6 34 3.6 194 388 5 368 2.9 -55 to 150 300 A. |
AOK9N90 Datasheet
The AOK9N90 is a N-Channel MOSFET.
| Part Number | AOK9N90 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source.
*Drain Current *ID= 9A@ TC=25℃ *Drain Source Voltage- : VDSS= 900V(Min) *Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and. |