| Part Number | AOT12N30 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. gle pulsed avalanche energy G Peak diode recovery dv/dt ID IDM IAS EAS dv/dt 11.5 11.5* 7.3 7.3* 29 3.8 430 5 TC=25°C Power Dissipation B Derate above 25oC PD 132 1 36 0.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8. |
AOT12N30 Datasheet and Specifications PDF
The AOT12N30 is a N-Channel MOSFET.
| Part Number | AOT12N30 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
300
V
VGS
Gate-Source.
*Drain Current *ID= 11.5A@ TC=25℃ *Drain Source Voltage- : VDSS= 300V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies. |