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AOT14N50 Datasheet

The AOT14N50 is a 14A N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberAOT14N50
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular. y dv/dt ID IDM IAR EAR EAS dv/dt 14 14* 11 11* 56 6 540 1080 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 .
Part NumberAOT14N50
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source.
*Drain Current
  –ID= 14A@ TC=25℃
*Drain Source Voltage- : VDSS= 500V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.
Part NumberAOT14N50
Description14A N-Channel MOSFET
ManufacturerFreescale Semiconductor
Overview The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC application. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 14A < 0.38Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol AOT14N50/AOB14N50 Parameter Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche e.

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