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AOT15S60 Datasheet

The AOT15S60 is a Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberAOT15S60
ManufacturerAlpha & Omega Semiconductors
Overview The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. . d avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A.
Part NumberAOT15S60
DescriptionPower Transistor
ManufacturerFreescale Semiconductor
Overview TM The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 63A 0.29Ω 16nC 3.6µJ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT15S60/AOB15S60 Parameter Symbol Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive .
Part NumberAOT15S60
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
  –ID= 15A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.

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