| Part Number | AOT20N25 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By provid. overy dv/dt VGS ID IDM IAS EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-t. |
AOT20N25 Datasheet and Specifications PDF
The AOT20N25 is a 20A N-Channel MOSFET.
| Part Number | AOT20N25 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
AOT20N25-VB
AOT20N25-VB Datasheet
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
68 11 35 Single
0.19
FEATURES • Dyn.
* Dynamic dV/dt rating * Repetitive avalanche rated * Fast switching * Ease of paralleling * Simple drive requirements Available Available TO-220AB S D G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Volt. |
| Part Number | AOT20N25 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
250
V
VGS
Gate-Source.
*Drain Current *ID= 20A@ TC=25℃ *Drain Source Voltage- : VDSS= 250V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies a. |