The AOT210L is a 30V N-Channel MOSFET.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | AOT210L Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low comb. Maximum Junction-to-Case * Surface mount package TO263 TA=25°C TA=70°C TC=25°C TC=100°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 105 82 400 20 16 68 231 176 88 1.9 1.2 -55 to 175 Units V V A A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 54 0.7 Ma. |
| Part Number | AOT210L Datasheet |
|---|---|
| Description | 30V N-Channel MOSFET |
| Manufacturer | Freescale Semiconductor |
| Overview | The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low comb. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 105A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continu. |
| Part Number | AOT210L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤2.9mΩ ·High frequency switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance.
*Low drain-source on-resistance: RDS(on) ≤2.9mΩ *High frequency switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *For fast switching power supply *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain. |
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