AOT25S65 Datasheet and Specifications PDF

Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 & AOTF25S65L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robust.

EAR Single pulsed avalanche energy G EAS 25 25* 16 16* 104 7 96 750 TC=25°C Power Dissipation B Derate above 25oC PD 357 50 2.9 0.4 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temper.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source.

*Drain Current
*ID= 25A@ TC=25℃
*Drain Source Voltage- : VDSS= 650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.