| Part Number | AOT2610L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AOT2610L & AOTF2610L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching po. TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG AOT2610L AOTF2610L 60 ±20 55 35 39 25 140 9 7 36 65 75 31 37.5 15.5 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambi. |
AOT2610L Datasheet
The AOT2610L is a N-Channel MOSFET.
| Part Number | AOT2610L |
|---|---|
| Description | TO-220F N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source .
*Drain Current *ID= 35A@ TC=25℃ *Drain Source Voltage- : VDSS=60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 10.7mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies an. |
| Part Number | AOT2610L |
|---|---|
| Description | TO-220 N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source .
*Drain Current *ID= 55A@ TC=25℃ *Drain Source Voltage- : VDSS=60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 10.7mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies an. |