AOT286L Datasheet and Specifications PDF

The AOT286L is a 80V N-Channel MOSFET.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberAOT286L Datasheet
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AOT286L/AOB286L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power l. S Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 80 ±20 70 55 245 13 10.5 50 125 167 83 2.1 1.3 -55 to 175 G S G S Units V V A A A mJ W W °C Thermal Characteristics.
Part NumberAOT286L Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an.
*Static drain-source on-resistance: RDS(on) ≤6mΩ
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies .
Part NumberAOT286L Datasheet
DescriptionN-Channel MOSFET
ManufacturerVBsemi
Overview AOT286L-VB AOT286L-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 7 mΩ 9 mΩ 100 A Single TO-220AB FEATURES • Tre.
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested APPLICATIONS
* Primary Side Switching
* Synchronous Rectification
* DC/AC Inverters
* LED Backlighting D G Top View GD S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate.

Price & Availability

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TME 786 1+ : 1.13 EUR
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