AOT2910L Datasheet
AOT2910L Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and s.
rrent TA=70°C Avalanche Current C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 100 ±20 30 22 21 15.5 80 6.0 4.5 15 11 50 27 25 13.5 2.1 1.
AOT2910L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor AOT2910L ·FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·100% avalanche t.
*Drain Current
*ID= 30A@ TC=25℃
*Drain Source Voltage-
: VDSS= 100V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 24mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for ser.