AOT296L Datasheet
AOT296L Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOT296L/AOB296L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power l.
nche energy L=0.1mH C VDS Spike I 10μs IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G AOB296L Maximum 100 ±20 70 50 180 9.5 7.5 40 80 120 107 54 2.1 1.3 -55 to 175 G G S Thermal Char.
AOT296L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor AOT296L ·FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) ·100% avalanche te.
*Drain Current
*ID= 70A@ TC=25℃
*Drain Source Voltage-
: VDSS= 100V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 10mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for ser.