| Part Number | AOT2N60 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By provid. VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G D G S D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT2N60 Parameter AOTF2N60 Symbol VDS Drain-Source Voltage 600 VGS ±. |
AOT2N60 Datasheet PDF
The AOT2N60 is a 2A N-Channel MOSFET.
| Part Number | AOT2N60 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID= 2A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) =4.4Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and g. |