| Part Number | AOT410L Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | The AOT410L/AOB410L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior.. TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS,IAR EAS,EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 150 108 405 12 10 50 125 333 167 1.9 1.2 -55 to 1. |
AOT410L Datasheet and Specifications PDF
The AOT410L is a 100V N-Channel MOSFET.
Key Specifications
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | AOT410L Datasheet |
|---|---|
| Description | TO-220 N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
AOT410L
·FEATURES ·Drain Current –ID= 150A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 6.5mΩ(Max) ·100% avalanche .
*Drain Current *ID= 150A@ TC=25℃ *Drain Source Voltage- : VDSS= 100V(Min) *Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Be suitable for synchronous rectification for s. |