AOT7S60 Datasheet and Specifications PDF

Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switchin.

epetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS 7 5 33 1.7 43 86 7* 5* TC=25°C Power Dissipation B Derate above 25oC PD 104 0.8 34 0.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 t.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.

*Drain Current
*ID=7A@ TC=25℃
*Drain Source Voltage- : VDSS=600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and g.