| Part Number | AOT8N60 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By provid. VDS (V) = 700V @ 150°C ID = 8A RDS(ON) < 0.9 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT8N60 Parameter Symbol AOTF8N60 V Drain-Source Voltage 600 DS VGS Gate-. |
AOT8N60 Datasheet and Specifications PDF
The AOT8N60 is a 8A N-Channel MOSFET.
| Part Number | AOT8N60 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID= 8A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and. |