| Part Number | AOTF11N62 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By . * 8* 8* 39 4.8 345 690 5 TC=25°C Power Dissipation B Derate above 25oC PD 50 0.4 39 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Symbol Maximum Junc. |
AOTF11N62 Datasheet and Specifications PDF
The AOTF11N62 is a N-Channel MOSFET.
| Part Number | AOTF11N62 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
620
V
VGS
Gate-Source.
*Drain Current *ID= 11A@ TC=25℃ *Drain Source Voltage- : VDSS= 620V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies a. |