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AOTF11S60 Datasheet

The AOTF11S60 is a Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberAOTF11S60
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robu. AS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Symbol Maximu.
Part NumberAOTF11S60
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
  –ID= 11A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies .

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Part Number Manufacturer Description
AOTF11S60L Alpha & Omega Semiconductors Power Transistor