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AOTF15S65 Datasheet

The AOTF15S65 is a Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberAOTF15S65
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AOT15S65L & AOB15S65L & AOTF15S65L & AOTF15S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robu. AR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD 208 1.7 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Th.
Part NumberAOTF15S65
DescriptionPower Transistor
ManufacturerFreescale Semiconductor
Overview The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOS TM high voltage process that is designed to deliver high levels of performance and robustness in switching applicatio. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.6µJ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT15S65/AOB15S65 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive a.
Part NumberAOTF15S65
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source.
*Drain Current
  –ID= 15A@ TC=25℃
*Drain Source Voltage- : VDSS= 650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.

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AOTF15S65L Alpha & Omega Semiconductors Power Transistor
AOTF15S65L Inchange Semiconductor N-Channel MOSFET