AOTF190A60L Datasheet and Specifications PDF

• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, .

AR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL AOTF190A60L 600 ±20 ±30 20* 12* 80 5 12.5 410 100 20 32 0.25 -55 to 150 300 Units V V V A A mJ mJ V/.

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF190A60L ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum L.

*With To-220F package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .