AOTF266L Datasheet
AOTF266L Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses.
5° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 268 134 TC=25° C 140 110 ±20 78 55 450 18 14 90 405 45.5 22.5 2.1 1.3 -55 to 175 A A A mJ W W ° C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature .
AOTF266L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor AOTF266L ·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max) ·100% avalanche .
*Drain Current
*ID= 140A@ TC=25℃
*Drain Source Voltage-
: VDSS= 60V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 3.5mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for se.