| Part Number | AOTF3N100 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applicati. EAR 72 Single pulsed avalanche energy G EAS 145 Peak diode recovery dv/dt dv/dt 5 TC=25°C Power Dissipation B Derate above 25oC PD 132 1.1 38 0.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T. |
AOTF3N100 Datasheet PDF
The AOTF3N100 is a N-Channel MOSFET.
| Part Number | AOTF3N100 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
1000
V
VGS
Gate-Sourc.
*Drain Current *ID= 2.8A@ TC=25℃ *Drain Source Voltage- : VDSS= 1000V(Min) *Static Drain-Source On-Resistance : RDS(on) = 6Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies an. |