AOTF4N60 Datasheet
AOTF4N60 Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular.
VGS ID IDM IAR EAR EAS dv/dt PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJ.
AOTF4N60 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF4N60 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum.
*With TO-220F packaging
*High speed switching
*Very high commutation ruggedness
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*PFC stages
*LCD & PDP TV
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RAT.