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AOTF4S60 Datasheet

The AOTF4S60 is a 600V 4A MOS Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberAOTF4S60
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switchin. lanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS 4 3.7 16 1.6 38 77 TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H PD dv/dt 83 0.67 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperat.
Part NumberAOTF4S60
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
  –ID=4A@ TC=25℃
*Drain Source Voltage- : VDSS=600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and g.