| Part Number | AOTF7S60 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switchin. epetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS 7 5 33 1.7 43 86 7* 5* TC=25°C Power Dissipation B Derate above 25oC PD 104 0.8 34 0.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 t. |
AOTF7S60 Datasheet and Specifications PDF
The AOTF7S60 is a 600V 7A MOS Power Transistor.
| Part Number | AOTF7S60 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID=7A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and g. |