| Part Number | AP2308GEN Datasheet |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| Overview | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used . tance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200809041 AP2308GEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 2. |
AP2308GEN Datasheet and Specifications PDF
The AP2308GEN is a N-CHANNEL ENHANCEMENT MODE POWER MOSFET.
| Part Number | AP2308GEN Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
AP2308GEN
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS = 2.5 V
0.050 at VGS = 1.8 V
ID (A)e 6a 6a 5.6
Qg (Typ.) 8.8 nC.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Converters * Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-So. |