APT20M18LVR Datasheet and Specifications PDF

The APT20M18LVR is a N-Channel MOSFET.

Key Specifications

PackageTO-264
Mount TypeThrough Hole
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberAPT20M18LVR Datasheet
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Sourc.
*Drain Current
*ID= 100A@ TC=25℃
*Drain Source Voltage- : VDSS=200V(Min)
*Static Drain-Source On-Resistance : RDS(on) =0.018Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.
Part NumberAPT20M18LVR Datasheet
DescriptionN-Channel MOSFET
ManufacturerAdvanced Power Technology
Overview APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, . Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F AD IN 200 100 400 5 ±30 ±40 625 5.0 Volts Watts W/°C °C Amps mJ -55 to 150 300 100 50 (Repetitive and Non-Repetitive) 1 4 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristi.

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