| Part Number | APT30M36B2FLL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
300
V
VGS
Gate-Sourc.
*Drain Current *ID= 84A@ TC=25℃ *Drain Source Voltage- : VDSS=300V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.036Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies an. |
APT30M36B2FLL Datasheet
The APT30M36B2FLL is a N-Channel MOSFET.
| Part Number | APT30M36B2FLL |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Advanced Power Technology |
| Overview | APT30M36B2FLL APT30M36LFLL 300V 84A 0.036Ω POWER MOS 7 R FREDFFERETDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and swi. l Power Dissipation @ TC = 25°C Linear Derating Factor 568 4.55 Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalan. |