| Part Number | APT30M75BLL Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
300
V
VGS
Gate-Sourc.
*Drain Current *ID=44A@ TC=25℃ *Drain Source Voltage- : VDSS=300V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.075Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and. |
APT30M75BLL Datasheet and Specifications PDF
The APT30M75BLL is a N-Channel MOSFET.
| Part Number | APT30M75BLL Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Advanced Power Technology |
| Overview | APT30M75BLL APT30M75SLL 300V 44A 0.075Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching. age Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT30M75 300 44 176 ±30 ±40 329 2.63 -55 to 150 300 44 30 1300 UNIT Volts Amps Volts Watts W/°C °C Amps mJ. |