| Part Number | APT47N60BC3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Sourc.
*Drain Current *ID=47A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.07Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and . |
APT47N60BC3 Datasheet
The APT47N60BC3 is a N-Channel MOSFET.
| Part Number | APT47N60BC3 |
|---|---|
| Description | MOSFET |
| Manufacturer | Microsemi |
| Overview | APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070Ω Super Junction MOSFET TO-247 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt . TATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Dra. |
| Part Number | APT47N60BC3 |
|---|---|
| Description | Super Junction MOSFET |
| Manufacturer | Advanced Power Technology |
| Overview | APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω D3PAK Super Junction MOSFET TO-247 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg . ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.06 0.5 0.07 25 250 ±100 2.10 3 3.9 (VGS = 10V, ID = 30A) Ohms µA nA Volts . |