| Part Number | APT60N60BCS Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview | 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra Low RDS(ON) •. 431 Watts 3.45 W/°C -55 to 150 °C 260 50 V/ns 11 Amps 3 mJ 1950 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = . |
APT60N60BCS Datasheet and Specifications PDF
The APT60N60BCS is a MOSFET.
| Part Number | APT60N60BCS Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Sourc.
*Drain Current *ID=60A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.045Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and. |
| Part Number | APT60N60BCS Datasheet |
|---|---|
| Description | Super Junction MOSFET |
| Manufacturer | Advanced Power Technology |
| Overview | 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B). V/ns Amps mJ Repetitive Avalanche Energy 3 1950 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 4 MIN 600 TYP MAX . |