B649 Datasheet and Specifications PDF

The B649 is a PNP Transistor.

Key Specifications

Package0603
Mount TypeSurface Mount
Pins2
Height450 µm
Length1.6 mm
Width800 µm
Max Operating Temp155 °C
Min Operating Temp-55 °C
Part NumberB649 Datasheet
ManufacturerJCST
Overview JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD6. Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -180 V 3. BASE VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Ba.
Part NumberB649 Datasheet
Description2SB649
ManufacturerUnisonic Technologies
Overview UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pai. ng (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006,D 2SB649/A PNP.

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