| Part Number | B80NF10 |
|---|---|
| Manufacturer | VBsemi |
| Overview |
B80NF10-VB
B80NF10-VB Datasheet
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = 10 V 100
0.023 at VGS = 4.5 V
ID (A) 100 85
FEATURES • TrenchFET®.
* TrenchFET® Power MOSFET * 175 °C Maximum Junction Temperature * Compliant to RoHS Directive 2002/95/EC TO-263 G DS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V . |
B80NF10 Datasheet
The B80NF10 is a N-Channel MOSFET.
| Part Number | B80NF10 |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary swit.
Type
STP80NF10 STB80NF10
VDSS
100 V 100 V
RDS(on) max
< 0.015 Ω
< 0.015 Ω
* Exceptional dv/dt capability * 100% Avalanche tested * Application oriented characterization ID 80 A 80 A Applications * Switching applications Description This Power MOSFET series realized with STMicroelectronics uni. |