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B817C Datasheet

The B817C is a Bipolar Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberB817C
Manufactureronsemi
Overview Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance • Wide SOA and high durability against breakdown •.
* Large current capacitance
* Wide SOA and high durability against breakdown
* Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCB.
Part NumberB817C
DescriptionPNP Epitaxial Planar Silicon Transistor
ManufacturerSANYO
Overview Ordering number : ENA0188 2SB817C / 2SD1047C 2SB817C / 2SD1047C Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Tr.
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* PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ) : 2SB817C Absolute Maximum Ratings at Ta=25°C.

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