The BA892 is a Silicon RF Switching Diode.
| Mount Type | Surface Mount |
|---|---|
| Height | 590 µm |
| Max Operating Temp | 125 °C |
| Min Operating Temp | -55 °C |
Infineon
Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance (typ. 0.45 Ω @ 3 mA) • Small capacitance • Pb-free (RoHS compliant) package • Qua.
teristics Reverse current VR = 20 V Forward voltage IF = 100 mA
IR - - 20 VF - - 1
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
nA V
2 2011-07-21
BA592/BA892
*
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
.
Siemens Semiconductor Group
BA 892 Silicon Rf Switching Diode Preliminary data • For VHF band switching in TV / VTR tuners • Low forward resistance, small capacitance, small inductance 2 1 VES05991 Type BA 892 Marking A Or.
ance rf 1/gp 0.7 0.5 - Ω I F = 3 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Reverse resistance kΩ nH VR = 1 V, f = 100 MHz Series inductance Ls Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -03-1998 BA 892 Diode capacitance CT = f (V R) f = 1MHz EHD07009 Forward resistance rf = .
Leshan Radio Company
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NXP Semiconductors
Planar, high performance band-switch diode in a small SMD plastic package (SOD523). PINNING SOD523 PIN 1 2 BA892 halfpage Marking code: 5. 1 Top view DESCRIPTION cathode anode 2 MBK124 Fig.
* Small plastic SMD package
* Low diode capacitance
* Low diode forward resistance
* Small inductance. APPLICATIONS
* Low loss band-switching in VHF television tuners
* Surface mount band-switching circuits. DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD52.
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| Part Number | Manufacturer | Description |
|---|---|---|
| BA892-02L | Infineon | Silicon RF Switching Diode |
| BA892-02V | Infineon | Silicon RF Switching Diode |
| BA892V-02V | Vishay | Band Switching Diodes |
| BA892V-02V-GS08 | Vishay | Band Switching Diodes |
| BA892V-04W | Vishay | Band Switching Diodes |