BAS125-06W Datasheet and Specifications PDF

The BAS125-06W is a Silicon Schottky Diodes.

Key Specifications

PackageSOT-323-3
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberBAS125-06W Datasheet
ManufacturerInfineon
Overview BAS125W Silicon Schottky Diodes  For low-loss, fast-recovery, meter protection, bias isolation and clamping applications  Integrated diffused guard ring  Low forward voltage 3 2 1 BAS125W BAS125. 25W BAS125-04W
*06W 1For calculation of R thJA please refer to Application Note Thermal Resistance RthJS K/W  230  265 1 Nov-15-2001 BAS125W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 2.
Part NumberBAS125-06W Datasheet
DescriptionPreliminary data Silicon Schottky Diodes
ManufacturerSiemens Semiconductor Group
Overview BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 1. Junction - soldering point, BAS125-04W
*06W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 385 5.

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