The BAS125-07 is a Silicon Schottky Diode.
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | BAS125-07 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BAS125-07W Silicon Schottky Diode For low-loss, fast-recovery, meter protection, 3 4 bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 2 1 4 3 1 2 EH. mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Rf Unit max. nA typ. IR VF 385 530 800 400 650 950 100 150 mV CT - 16 1.1 - pF 2 Aug-16-2001 BAS125-07W Forward current IF = f (VF ) TA = Parameter . |
| Part Number | BAS125-07 Datasheet |
|---|---|
| Description | Silicon Schottky Diode |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BAS 125-07W Silicon Schottky Diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 4 2 1 VPS05605 . lues min. DC characteristics Reverse current typ. max. Unit IR 385 530 800 150 200 µA VR = 20 V VR = 25 V Forward voltage VF 400 650 900 mV I F = 1 mA I F = 10 mA I F = 35 mA AC characteristics Diode capacitance CT rf - 16 1.1 - pF Ω VR = 0 V, f = 1 MHz Differential forward resistance . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BAS125-07W | Infineon | Silicon Schottky Diode |
| BAS125-07W | Siemens Semiconductor Group | Silicon Schottky Diode |