| Part Number | BAT17-04W Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junct.
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* Low inductance Ls = 1.4 nH (typical) * Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz * Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm) * Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests. |
BAT17-04W Datasheet and Specifications PDF
The BAT17-04W is a Series silicon RF Schottky diode pair.
| Part Number | BAT17-04W Datasheet |
|---|---|
| Description | Silicon Schottky Diode |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon Schottky Diode BAT17-04W,BAT17-05W,BAT17-06W Diodes Features For mixer applications in VHF/UHF range For high-speed switching application BAT17-04W BAT17-05W BAT17-06W Absolute Ma. For mixer applications in VHF/UHF range For high-speed switching application BAT17-04W BAT17-05W BAT17-06W Absolute Maxim um Ratings Ta = 25 P aram eter Sym bol Value Diode reverse voltage VR 4 Forward current IF 130 Total power dissipation TS 92 P tot 150 Junction temperature Tj 1. |
| Part Number | BAT17-04W Datasheet |
|---|---|
| Description | Silicon Schottky Diode |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BAT 17W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications 3 2 1 BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W VSO05561 Type BAT 17W BAT 17-0. lumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 4 V µA I (BR) = 10 µA Reve. |