BAT62-03W Datasheet
BAT62-03W Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type Silicon Schottky Doide BAT62-03W Diodes Features Low Barrier diode for detectors up to GHz frequencies SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.05 0.3 -0.05 +0.1 1.3 -0.1 2.6+0.
Low Barrier diode for detectors up to GHz frequencies SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.05 0.3 -0.05 +0.1 1.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.05 0.1 -0.02 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward curre.
BAT62-03W Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q6270.
pacitance CC - f = 1 MHz Differential resistance R0 - kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Ls Semiconductor Group 2 Mar-07-1996 BAT 62-03W Forward current IF = f (VF) TA = parameter Leakage current IR = f (VR) TA = Parameter 10 4 10 3 uA uA IF 10 3 IR TA = 25°C.
BAT62-03W Datasheet (Infineon)
Infineon
Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free (RoHS compliant) package BAT62... BAT62 "! , , BAT62-09S $# " , , ! BAT62-03W BAT62-02V BAT62-02.
02L, -07L4, -03W, TS ≤ 108 °C BAT62-02W, -02V, TS ≤ 109 °C BAT62-07W, TS ≤ 103 °C BAT62-09S, TS ≤ 105 °C VR IF Ptot Junction temperature Storage temperature Tj Tstg Thermal Resistance Parameter Junction - soldering point1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W, 02V BAT62-07W BAT62-09S Symbol .