The BAT64-04W is a 250mW 40V Schottky Barrier Diode.
| Package | SOT-23 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 800 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
Micro Commercial Components
Features • Integrated Diffused Guard Ring • Low Forward Voltage • For low-Loss, Fast-Recovery, Meter Protection,Bias Isolation and Clamping Applications • Epoxy Meets UL 94 V-0 Flammability Rating • .
* Integrated Diffused Guard Ring
* Low Forward Voltage
* For low-Loss, Fast-Recovery, Meter Protection,Bias Isolation
and Clamping Applications
* Epoxy Meets UL 94 V-0 Flammability Rating
* Halogen Free Available Upon Request By Adding Suffix "-HF"
* Moisture Sensitivity Level 1
* Lead Free Finish/.
Kexin Semiconductor
SMD Type Silicon Schottky Diodes BAT64W;BAT64-04W BAT64-05W;BAT64-06W Diodes Features For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused gua.
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage BAT64W BAT64-04W BAT64-0 5W Absolute M axim um R atings T a = 25 BAT64-06W Param eter Sym bol D iode reverse voltage VR Forward current IF A verage fo.
Siemens Semiconductor Group
BAT 64...W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 2 1 VSO05561 BA.
Tstg
Semiconductor Group Semiconductor Group
11
Sep-07-1998 1998-11-01
BAT 64
*W
Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - soldering point BAT 64-04/06W Junction - solderin.
Infineon
Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free (RoHS compliant) packa.
urrent (t ≤ 10ms) VR IF IFSM Average rectified forward current (50/60Hz, sinus) IFAV Total power dissipation Ptot BAT64, TS ≤ 86°C BAT64-02W, -02V TS ≤ 121°C BAT64-04, BAT64-06, TS ≤ 61°C BAT64-04W, BAT64-06W, TS ≤ 111°C BAT64-05, TS ≤ 36°C BAT64-05W, TS ≤ 104°C Junction temperature Tj .
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 12000 | 15000+ : 0.04147 USD 30000+ : 0.04085 USD 60000+ : 0.04022 USD 120000+ : 0.0396 USD |
View Offer |
| Avnet | 285 | 1+ : 0.227 USD 10+ : 0.126 USD 25+ : 0.121 USD 50+ : 0.114 USD |
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| Newark | 285 | 1+ : 0.044 USD 10+ : 0.044 USD 25+ : 0.044 USD 50+ : 0.044 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BAT64-04 | Kexin Semiconductor | Schottky Diodes |
| BAT64-04 | Yangjie Electronic | Schottky Barrier Diode |
| BAT64-04 | Galaxy Microelectronics | Small Signal Schottky Barrier Diode |
| BAT64-04 | Siemens Semiconductor Group | Silicon Schottky Diodes |
| BAT64-04 | Infineon | Silicon Schottky Diodes |
| BAT64-04 | Micro Commercial Components | Small Signal Schottky Diode |
| BAT64-04 | JCET | SCHOTTKY BARRIER DIODE |