BAT66-05 Datasheet and Specifications PDF

BAT66... Silicon Schottky Diode
Power rectifier diode
For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D 1 D 2 1 2 3 ESD: Electro.

C Characteristics Reverse current VR = 25 V VR = 25 V, TA = 85 °C Forward voltage I F = 10 mA I F = 100 mA IF = 1 A VF 0.28 0.35 0.47 0.35 0.6 IR 10 1000 V Unit µA AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz CT - 30 40 pF 2 Feb-14-2003 BAT66
* Reverse current IR = (VR) TA .

Silicon Schottky Diode Preliminary Data Low-power Schottky rectifier diode q For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes q BAT 66-05 Type BAT 66.

ard voltage IF = 10 mA IF = 100 mA IF = 1 A Diode capacitance VR = 10 V, f = 1 MHz Symbol min. IR
*
* VF
*
*
* CT
* 0.28 0.35 0.47 30 0.35
* 0.60 40 pF
*
* 10 1 Values typ. max. µA mA Unit V Forward current IF = f (VF) Reverse current IR = f (VR) Semiconductor Group 2 BAT 66-05 Forward curre.