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BAW56LT1 Datasheet

The BAW56LT1 is a Monolithic Dual Switching Diode Common Anode. Download the datasheet PDF and view key features and specifications below.

Part NumberBAW56LT1
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAW56LT1/D Monolithic Dual Switching Diode Common Anode ANODE 3 CATHODE 1 2 CATHODE BAW56LT1 Motorola Preferred Device 3 1 MAXIMUM RA. µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = .
Part NumberBAW56LT1
DescriptionMonolithic Dual Switching Diode Common Anode
Manufactureronsemi
Overview BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Fo.
* Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) Symbol VR IF IFM(surge) IFSM 4 A Value 70 200 500 Unit V mA mA ANODE 3 http://onsemi.com CATHODE 1 2 CATHODE THERM.
Part NumberBAW56LT1
DescriptionMonolithic Dual Switching Diode Common Anode
ManufacturerLeshan Radio Company
Overview . .