BC109B Datasheet

The BC109B is a Low Power Bipolar Transistors.

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Part NumberBC109B
ManufacturerMulticomp
Overview Symbol BC109 Collector-Emitter Voltage VCEO 25 Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC =.
* NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collect.
Part NumberBC109B
Description(BC107 - BC109) Low noise general purpose audio amplifiers
ManufacturerComset Semiconductors
Overview NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use i. 8 BC109 Min - Typ - Max 15 Unit nA ICBO Collector Cutoff Current VCB = 20 V IE = 0 V Tj = 150°C VEB = 5 V IC = 0 IC = 10 mA IB = 0 IC = 10 µA VBE = 0 - - 15 µA IEBO Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 45 20 20 50 30 30 5 - 50 - .
Part NumberBC109B
DescriptionGENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR
ManufacturerTT Electronics
Overview GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing. ver Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 55.
Part NumberBC109B
DescriptionNPN SILICON TRANSISTOR
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.. C109) 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40 hFE VCE=5.0V, IC=10μA (BC108C, BC109C) 100 hFE VCE=5.0V, I.

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