BC327-16 Datasheet and Specifications PDF

The BC327-16 is a PNP Epitaxial Silicon Transistor.

Key Specifications

PackageTO-92
Max Operating Temp150 °C
BC327-16 integrated circuit image
Part NumberBC327-16 Datasheet
Manufactureronsemi
Overview PNP Epitaxial Silicon Transistor BC327 Features  Switching and Amplifier Applications  Suitable for AF−Driver Stages and Low−Power Output Stages  Complement to BC337/BC338  These are Pb−Free Devi.
* Switching and Amplifier Applications
* Suitable for AF
*Driver Stages and Low
*Power Output Stages
* Complement to BC337/BC338
* These are Pb
*Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector
*Emitter Voltage
*50 V VCEO Colle.
Part NumberBC327-16 Datasheet
DescriptionAmplifier Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol B. ter Breakdown Voltage (IC =
*100 µA, IE = 0) BC327 BC328 V(BR)CES Emitter
* Base Breakdown Voltage (IE =
*10 mA, IC = 0) Collector Cutoff Current (VCB =
*30 V, IE = 0) (VCB =
*20 V, IE = 0) Collector Cutoff Current (VCE =
*45 V, VBE = 0) (VCE =
*25 V, VBE = 0) Emitter Cutoff Current (VEB =
*4.0 V.
Part NumberBC327-16 Datasheet
DescriptionPNP Transistor
ManufacturerNXP Semiconductors
Overview PNP general-purpose transistors. Table 1. Product overview Type number Package NXP BC807 SOT23 BC807W SOT323 BC327[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT5.
* High current
* Low voltage 1.3 Applications
* General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC cu.
Part NumberBC327-16 Datasheet
DescriptionPNP Silicon AF Transistors
ManufacturerSiemens Semiconductor Group
Overview PNP Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 338 (NPN) BC 327 BC 328 2 3 1 Type BC 327 BC 327-. mA mW ˚C Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdow.

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